GaN MOS
产品性能：耐压650V，内阻低至100mΩ
优势特点：高频高效，高耐压，耐高温，高可靠性；可以实现节能降耗，小体积，低重量，高功率密度。
应用领域：氮化镓锂电池充电器/PD快充/大功率适配器
产品选型
| Part No. | Channel | VDS (V) | VGS (V) | VGS(th) (V) | RDS(ON) (mΩ)10V | RDS(ON) (mΩ)8V | RDS(ON) (mΩ)6V | ID (A) Tc=25℃ | EAS (mJ) | Ciss (pF) | Qg (nC) | Package |
| Part No. | Channel | VDS (V) | VGS (V) | VGS(th) (V) | RDS(ON) (mΩ)10V | RDS(ON) (mΩ)8V | RDS(ON) (mΩ)6V | ID (A) Tc=25℃ | EAS (mJ) | Ciss (pF) | Qg (nC) | Package |
| ASDM9GN65TE | N | 650 | ±20 | 2.0 | 290 | 9 | 500 | 21 | DFN8*8 | |||
| ASDM10GN65P | N | 650 | -10~7 | 1.0 | 160 | 360 | 10 | 71 | 2 | TO-220 | ||
| ASDM11GN65TE | N | 650 | ±20 | 2.0 | 270 | 11 | 490 | 12 | DFN8*8 | |||
| ASDM13GN65P | N | 650 | ±20 | 2.0 | 270 | 13 | 490 | 12 | TO-220 | |||
| ASDM15GN65P | N | 650 | -10~7 | 1.0 | 100 | 210 | 15 | 115 | 3 | TO-220 | ||
| ASDM15GN65TE | N | 650 | -10~7 | 1.0 | 100 | 210 | 15 | 123 | 3 | DFN8*8 | ||
| ASDM18GN65TE | N | 650 | ±20 | 4.0 | 100 | 18 | N | 38 | DFN8*8 | |||
| ASDM23GN65P | N | 650 | ±20 | 2.0 | 150 | 23 | 500 | 12 | TO-220 | |||
| ASDM23GN90P | N | 900 | ±20 | 4.5 | 175 | 23 | 606 | 38 | TO-220 |
Copyright © 2023 安森德半导体. All Rights Reserved 粤ICP备2022080635号-2
