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SJ MOS

产品性能:耐压600-650V,内阻21-900mΩ
优势特点:多层外延工艺,具有内阻低,损耗小,Qg小,IDM&EAS能力优越等特点。
应用领域:直流充电桩/大功率电源/通信电源/服务器电源/逆变器/快充/适配器/消费家电等。

产品选型

Part No.ChannelVDS (V)VGS (V)Vth (V)RDS(ON) (mΩ)TypRDS(ON) (mΩ)MaxID (A) Tc=25℃EAS (mJ)Ciss (pF)Qg (nC)Package特性
Part No.PDFChannelVDS (V)VGS (V)Vth (V)RDS(ON) (mΩ)TypRDS(ON) (mΩ)MaxID (A) Tc=25℃EAS (mJ)Ciss (pF)Qg (nC)Package特性
ASJ037N65L2HFN650±202.5-4.531378312006319166TO-247-3快恢复
ASJ028N60L2HFN600±303-2.8-52228917028950186TO-247-3快恢复
ASDM65S850NKQN650±302-4850900467.53127.6TO-252
ASDM65S900NKQN650±302-48509004683128TO-252
ASJ360N65K1HEN650±302-43413601130078018.9TO-252
ASJ360N65F1HEN650±302.0-4.03413601130078018.9TO-220F
ASJ360N65G1HEN650±302-43413601130078018.9TO-263
ASJ360N65K5HEN650±302-43413601130078218.9TO-251
ASDM65S300NFN650±302-42503001554108619.6TO-220F
ASDM65S260NFN650±302.5-4.522726015270147325.2TO-220F非快
ASDM65S260NKQN650±302.5-4.522526015270145325.2TO-252非快
ASDM65S180NFN650±302-416018022500168338.1TO-220F
ASDM65S180NTEN650±302.5-4.515918021497196032.9DFN8*8非快恢复
ASDM65S130NFN650±302.5-4.510513025750289749.4TO-220F
ASDM65S099NXN650±202.5-4.59199401000391070TO-247-3快恢复
ASDM65S070NXN650±203-56170507805581100TO-247-3非快恢复

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